Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2018
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2018.2833883